Ge/Si Avalanche Photodiode With Integrated Heater And Fabrication Thereof

ABSTRACT

Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.

CROSS-REFERENCE TO RELATED PATENT APPLICATION(S)

This application is the non-provisional application of, and claims thepriority benefit of, U.S. Patent Application No. 61/966,353, filed onFeb. 21, 2014, which is herein incorporated by reference in itsentirety.

TECHNICAL FIELD

The present disclosure is related to photonic devices. Moreparticularly, the present disclosure is related to an integratedstructure of an avalanche photodiode and a heater thereof.

BACKGROUND

Avalanche photodiodes (APDs) are widely utilized for fiber-opticcommunications due to higher sensitivity benefitting from carriermultiplication mechanism. Traditional III-V APD receivers offer morethan 6 dB sensitivity improvement up to 10 Gb/s data rate when comparedto PIN photodiodes (PD). However, InP-based APDs show limitedgain-bandwidth product and high multiplication noise due to largek-factor, i.e., ratio of impact ionization coefficients. Silicon(Si)-based APDs have been demonstrated to be the best device forhigh-speed communication applications, where germanium (Ge) is used asabsorption material. Ge material is an indirect band-gap material. Whenunder tensile strain, both Ge L-band and r-band shrink, but the directΓ-band shrinks faster and becomes a direct band-gap material, therebythe Ge absorption coefficient to longer-wavelength incident lightincreases. Additionally, Ge material can be utilized in APDs for C-bandapplications (around 1500 nm or 1550 nm) and fiber-to-the-home (FTTH)applications (around 1577 nm). Typically C-band application appliesindustrial standard, where the operational temperature ranges from −40°C. to 85° C., while the operational temperature range of FTTHapplication is usually from −20° C. to 75° C. With wavelength around1550 nm and 1577 nm, the Ge material absorption coefficient is sensitiveto temperature, and GeSi APD sensitivity deteriorates seriously whenoperating in a lower-temperature environment instead of roomtemperature.

One approach to maintain Ge PD performance at lower temperature is tomount a 30Ω resistor on the top-surface of a 6-pin transistor outline(TO)-header, as illustrated in FIG. 1. When a 3.3V bias voltage isapplied on the resistor, the heat generated in the resistor can heat upthe TO-header and increase TO temperature by about tens of degreesdepending on consumption power. Accordingly, the sensitivity performanceof Ge/Si APDs can be improved to meet specified requirements. Sincethere is a gap of hundreds of microns between the resistor and Ge/Si APDchip, a time period of typically tens of seconds is required to transferheat from the resistor to the Ge region via TO-header, as shown inFIG. 1. As a result, the efficiency and response speed of this approachis too low for practical applications.

SUMMARY

In one aspect, an apparatus may include a substrate, at least onetop-illuminated Ge/Si avalanche photodiode, and at least one heater. Theat least one top-illuminated Ge/Si avalanche photodiode may be formed ona primary side of the substrate. The Ge/Si avalanche photodiode mayinclude a first Si layer, a second Si layer, a charge layer, a Ge layer,and a doped layer. The first Si layer may be doped with dopants of afirst type. The second Si layer may function as a multiplication layer,and may be un-intentionally doped, lightly doped with dopants of thefirst type at a concentration of less than 5E17 cm⁻³, or lightly dopedwith dopants of a second type at a concentration of less than 5E17 cm⁻³.The charge layer may be doped with dopants of the second type. The Gelayer may function as an absorption layer, and may be un-intentionallydoped, lightly doped with dopants of the first type at a concentrationof less than 5E17 cm⁻³, or lightly doped with dopants of the second typeat a concentration of less than 5E17 cm⁻³. The doped layer may be dopedwith dopants of the second type. The at least one heater may beintegrated in or on the substrate. When an environmental temperature isbelow a threshold temperature and in response to a bias being appliedthereon, the at least one heater may be configured to increase atemperature of the structure to maintain a level of sensitivity of theGe/Si avalanche photodiode structure.

In another aspect, a method of fabrication of an apparatus may include:forming a Ge/Si avalanche photodiode on a primary side of asilicon-on-insulator (SOI) substrate, the SOI substrate comprising a topSi layer, a Si substrate layer, and a buried oxide (BOX) layer disposedbetween the top Si layer and the Si substrate layer; performing a firstetch process on the top Si layer of the SOI substrate; performing asecond etch process on the BOX layer of the SOI substrate till the Sisubstrate layer to expose a portion of the Si substrate layer of the SOIsubstrate; forming at least one integrated heater in the SOI substrate;depositing a dielectric layer for insulation; performing a dielectricetch process to fabricate one or more contacts; performing a salicideprocess; performing a metal deposition process; and performing a metaletch process.

In yet another aspect, a method of fabrication of an apparatus mayinclude: forming a Ge/Si avalanche photodiode on a top Si layer of asilicon-on-insulator (SOI) substrate, the SOI substrate furthercomprising a buried oxide (BOX) layer below the top Si layer; performingan ion implantation process on a portion of the top Si layer to form aresistive component of at least one integrated heater in a region dopedwith dopants of a first type; depositing a dielectric layer forinsulation; performing a dielectric etch process to fabricate one ormore contacts; performing a salicide process; performing a metaldeposition process; and performing a metal etch process.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present disclosure, and are incorporated in andconstitute a part of this specification. The drawings illustrateembodiments of the present disclosure and, together with thedescription, serve to explain the principles of the present disclosure.The drawings may not necessarily be in scale so as to better presentcertain features of the illustrated subject matter.

FIG. 1 shows a conventional 6-pin TO-header solution for Ge/Si APD. (a)TO-header mounted with Ge/Si APD chip and resistor heater and (b) Ge/SiAPD chip.

FIG. 2 shows a Ge/Si avalanche photodiode with at least one heaterintegrated therein in accordance with an embodiment of the presentdisclosure.

FIG. 3 shows a Ge/Si avalanche photodiode with at least one heaterintegrated therein in accordance with another embodiment of the presentdisclosure.

FIG. 4 shows a Ge/Si avalanche photodiode with at least one heaterintegrated therein in accordance with yet another embodiment of thepresent disclosure.

FIG. 5 shows a design of a 6-pin TO solution mounted with heaterintegrated Ge/Si APD in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS ExampleImplementations

To solve the aforementioned problems, the present disclosure provides anavalanche photodiode with an integrated heater, and a fabrication methodthereof.

FIG. 2 shows a cross-sectional view of an apparatus 200 that includes aGe/Si avalanche photodiode 204 with at least one heater integratedtherein in accordance with an embodiment of the present disclosure. Asshown in FIG. 2, Ge/Si avalanche photodiode 204 includes at least oneintegrated heater formed on top of a substrate 210, which may be asilicon-on-insulator (SOI) substrate. Substrate 210 may include siliconsubstrate layer, a buried (BOX) layer, and a top Si layer, with BOXlayer disposed between silicon substrate layer and top Si layer.

In terms of fabrication process, firstly a mesa-structure Ge/Siavalanche photodiode 204 is formed on top Si layer, followed bydeposition of at least one resistive component to function as at leastone heater 205. The at least one resistive component of the at least oneheater 205 may have resistance of about 10˜500. In some implementations,the at least one heater 205 may include metal or TaN. A doped well dopedwith dopants of a second type (e.g., p type) may be formed by anotherion implantation process to block electrical current from diffusing tosubstrate 210. A passivation layer may then be formed over the at leastone heater 205 and Ge/Si avalanche photodiode 204. The passivation layermay also serve as the anti-reflection layer of the mesa-structure Ge/Siavalanche photodiode. Finally, electrically-conductive pads (e.g.,aluminum pads) may be formed on top of the at least one heater 205 andGe/Si avalanche photodiode 204, respectively, after a pad open process.

When the environmental temperature decreases to a certain point, e.g.,below a threshold temperature, a temperature control loop may beautomatically triggered to apply a proper bias voltage on the at leastone heater 205, i.e., to activate or turn on the at least one heater205. Accordingly, the temperature of the junction region of Ge/Siavalanche photodiode 204 may be increased efficiently and quickly.Temperature is kept within an optimized range to maintain a high levelof sensitivity of Ge/Si avalanche photodiode 204 as well as a lowbit-error rate level of Ge/Si avalanche photodiode 204.

FIG. 3 shows a cross-sectional view of an apparatus 300 that includes aGe/Si avalanche photodiode 304 with at least one heater integratedtherein in accordance with an embodiment of the present disclosure. Asshown in FIG. 3, Ge/Si avalanche photodiode 304 includes at least oneintegrated heater formed on a top portion of a Si substrate layer 301underneath a buried oxide (BOX) layer 302 of a silicon-on-insulator(SOI) substrate 310. SOI substrate 310 may include silicon substratelayer 301, BOX layer 302, and a top Si layer 303, with BOX layer 302disposed between silicon substrate layer 301 and top Si layer 303.

In terms of fabrication process, firstly a mesa-structure Ge/Siavalanche photodiode 304 is formed on top Si layer 303. Then, a dopedregion doped with dopants of the first type (e.g., n type) is formed insilicon substrate layer 301 by ion implantation process to function asat least one heater 305. The at least one heater 305 may include aresistive component having resistance of about 10˜50Ω. In someimplementations, the at least one heater 305 may include metal or TaN. Apassivation layer is then formed over the at least one heater 305 andGe/Si avalanche photodiode 304. The passivation layer may also serve asthe anti-reflection layer of the mesa-structure Ge/Si avalanchephotodiode. Finally, electrically-conductive pads (e.g., aluminum pads)may be formed on top of the at least one heater 305 and Ge/Si avalanchephotodiode 304, respectively, after a pad open process.

When the environmental temperature decreases to a certain point, e.g.,below a threshold temperature, a temperature control loop may beautomatically triggered to apply a proper bias voltage on the at leastone heater 305, i.e., to activate or turn on the at least one heater305. Accordingly, the temperature of the junction region of Ge/Siavalanche photodiode 304 may be increased efficiently and quickly.Temperature is kept within an optimized range to maintain a high levelof sensitivity of Ge/Si avalanche photodiode 304 as well as a lowbit-error rate level of Ge/Si avalanche photodiode 304.

FIG. 4 shows a cross-sectional view of an apparatus 400 that includes aGe/Si avalanche photodiode 404 with at least one heater integratedtherein in accordance with an embodiment of the present disclosure. Asshown in FIG. 4, Ge/Si avalanche photodiode 404 includes at least oneintegrated heater formed on a top portion of a Si substrate layer 401underneath a buried oxide (BOX) layer 402 of a silicon-on-insulator(SOI) substrate 410. SOI substrate 410 may include silicon substratelayer 401, BOX layer 402, and a top Si layer 403, with BOX layer 402disposed between silicon substrate layer 401 and top Si layer 403.

In terms of fabrication process, firstly a mesa-structure Ge/Siavalanche photodiode 404 is formed on top Si layer 403. Then, a dopedregion doped with dopants of the first type (e.g., n type) is formed intop Si layer 403 by ion implantation process to function as at least oneheater 405. The at least one heater 405 may include a resistivecomponent having resistance of about 10˜50Ω. In some implementations,the at least one heater 405 may include metal or TaN. A passivationlayer is then formed over the at least one heater 405 and Ge/Siavalanche photodiode 404. The passivation layer may also serve as theanti-reflection layer of the mesa-structure Ge/Si avalanche photodiode.Finally, electrically-conductive pads (e.g., aluminum pads) may beformed on top of the at least one heater 405 and Ge/Si avalanchephotodiode 404, respectively, after a pad open process.

When the environmental temperature decreases to a certain point, e.g.,below a threshold temperature, a temperature control loop may beautomatically triggered to apply a proper bias voltage on the at leastone heater 405, i.e., to activate or turn on the at least one heater405. Accordingly, the temperature of the junction region of Ge/Siavalanche photodiode 404 may be increased efficiently and quickly.Temperature is kept within an optimized range to maintain a high levelof sensitivity of Ge/Si avalanche photodiode 404 as well as a lowbit-error rate level of Ge/Si avalanche photodiode 404.

FIG. 5 is a cross-sectional view of a package that includes 6-pinTO-header 521, a TO-cap 522 and a Ge/Si avalanche photodiode withintegrated heater 523. The 6-pin TO-header 521 may be mounted with theat least one heater integrated in Ge/Si avalanche photodiode. Anelectrode of a resistive component of the at least one heater may beconnected to one pin of the 6-pin TO header 521, and another electrodeof the resistive component may be connected to a ground or a body of the6-pin TO-header 521.

Highlights of Select Features

In view of the above, features of the present disclosure are highlightedbelow.

In one aspect, an apparatus may include a substrate, at least onetop-illuminated Ge/Si avalanche photodiode, and at least one heater. Theat least one top-illuminated Ge/Si avalanche photodiode may be formed ona primary side of the substrate. The Ge/Si avalanche photodiode mayinclude a first Si layer, a second Si layer, a charge layer, a Ge layer,and a doped layer. The first Si layer may be doped with dopants of afirst type. The second Si layer may function as a multiplication layer,and may be un-intentionally doped, lightly doped with dopants of thefirst type at a concentration of less than 5E17 cm⁻³, or lightly dopedwith dopants of a second type at a concentration of less than 5E17 cm⁻³.The charge layer may be doped with dopants of the second type. The Gelayer may function as an absorption layer, and may be un-intentionallydoped, lightly doped with dopants of the first type at a concentrationof less than 5E17 cm⁻³, or lightly doped with dopants of the second typeat a concentration of less than 5E17 cm⁻³. The doped layer may be dopedwith dopants of the second type. The at least one heater may beintegrated in or on the substrate. When an environmental temperature isbelow a threshold temperature and in response to a bias being appliedthereon, the at least one heater may be configured to increase atemperature of the structure to maintain a level of sensitivity of theGe/Si avalanche photodiode structure.

In some implementations, the at least one heater may include a resistivecomponent.

In some implementations, the resistive component may be fabricated byion implantation, which may form a doped region doped with dopants ofthe first type.

In some implementations, the at least one heater may include a dopedwell doped with dopants of the second type.

In some implementations, dopants of the first type may be n-typedopants, and dopants of the second type may be p-type dopants.

In some implementations, the substrate may include asilicon-on-insulator (SOI) substrate, a bulk Si substrate, or a siliconcarbide (SiC) substrate.

In some implementations, the Ge/Si avalanche photodiode may include awaveguide structure.

In some implementations, the Ge/Si avalanche photodiode may furtherinclude one or more electrodes, and the at least one heater may includeone or more electrodes different than and separate from the one or moreelectrodes of the Ge/Si avalanche photodiode.

In some implementations, the substrate may include a Si layer and a BOXlayer adjacent and below the Si layer. The at least one heater may beformed in the substrate to be adjacent and below the BOX layer of thesubstrate.

In some implementations, the substrate may include a Si layer and a BOXlayer adjacent and below the Si layer, and wherein the at least oneheater is formed in the Si layer of the substrate.

In some implementations, the at least one heater may include metal orTaN.

In some implementations, the apparatus may further include a packagingstructure that contains the Ge/Si avalanche photodiode therein, and thepackaging structure may be of a transistor outline (TO) type or abutterfly type.

In some implementations, the packaging structure may be of the TO type,and the packaging structure may include a 6-pin TO-header mounted withthe at least one heater integrated in Ge/Si avalanche photodiode.

In some implementations, an electrode of a resistive component of the atleast one heater may be connected to one pin of the 6-pin TO header, andanother electrode of the resistive component may be connected to aground or a body of the 6-pin TO-header.

In some implementations, the apparatus may further include a temperaturecontrol loop configured to be triggered to maintain a temperature of theavalanche photodiode in a range using the at least one heater inresponse to the environment temperature falling below the thresholdtemperature.

In another aspect, a method of fabrication of an apparatus may include:forming a Ge/Si avalanche photodiode on a primary side of asilicon-on-insulator (SOI) substrate, the SOI substrate comprising a topSi layer, a Si substrate layer, and a buried oxide (BOX) layer disposedbetween the top Si layer and the Si substrate layer; performing a firstetch process on the top Si layer of the SOI substrate; performing asecond etch process on the BOX layer of the SOI substrate till the Sisubstrate layer to expose a portion of the Si substrate layer of the SOIsubstrate; forming at least one integrated heater in the SOI substrate;depositing a dielectric layer for insulation; performing a dielectricetch process to fabricate one or more contacts; performing a salicideprocess; performing a metal deposition process; and performing a metaletch process.

In some implementations, in forming the at least one integrated heaterin the SOI substrate, the method may perform operations includingperforming an ion implantation process within a region of the Sisubstrate layer where a portion of the BOX layer above the Si substratelayer is removed by the second etch process to form a resistivecomponent of at least one integrated heater in a region doped withdopants of a first type.

In yet another aspect, a method of fabrication of an apparatus mayinclude: forming a Ge/Si avalanche photodiode on a top Si layer of asilicon-on-insulator (SOI) substrate, the SOI substrate furthercomprising a buried oxide (BOX) layer below the top Si layer; performingan ion implantation process on a portion of the top Si layer to form aresistive component of at least one integrated heater in a region dopedwith dopants of a first type; depositing a dielectric layer forinsulation; performing a dielectric etch process to fabricate one ormore contacts; performing a salicide process; performing a metaldeposition process; and performing a metal etch process.

Additional Notes

Although some embodiments are disclosed above, they are not intended tolimit the scope of the present disclosure. It will be apparent to thoseskilled in the art that various modifications and variations can be madeto the disclosed embodiments of the present disclosure without departingfrom the scope or spirit of the present disclosure. In view of theforegoing, the scope of the present disclosure shall be defined by thefollowing claims and their equivalents.

What is claimed is:
 1. An apparatus, comprising: a substrate; at leastone top-illuminated Ge/Si avalanche photodiode on a primary side of thesubstrate, the Ge/Si avalanche photodiode comprising: a first Si layerdoped with dopants of a first type; a second Si layer as amultiplication layer which is un-intentionally doped, lightly doped withdopants of the first type at a concentration of less than 5E17 cm⁻³, orlightly doped with dopants of a second type at a concentration of lessthan 5E17 cm⁻³; a charge layer doped with dopants of the second type; aGe layer as an absorption layer which is un-intentionally doped, lightlydoped with dopants of the first type at a concentration of less than5E17 cm⁻³, or lightly doped with dopants of the second type at aconcentration of less than 5E17 cm⁻³; and a doped layer doped withdopants of the second type; and at least one heater integrated in or onthe substrate, wherein, when an environmental temperature is below athreshold temperature and in response to a bias being applied thereon,the at least one heater is configured to increase a temperature of thestructure to maintain a level of sensitivity of the Ge/Si avalanchephotodiode structure.
 2. The apparatus of claim 1, wherein the at leastone heater comprises a resistive component.
 3. The apparatus of claim 0,wherein the resistive component is fabricated by ion implantation, whichforms a doped region doped with dopants of the first type.
 4. Theapparatus of claim 0, wherein the at least one heater comprises a dopedwell doped with dopants of the second type.
 5. The apparatus of claim 1,wherein dopants of the first type comprise n-type dopants, and whereindopants of the second type comprise p-type dopants.
 6. The apparatus ofclaim 1, wherein the substrate comprises a silicon-on-insulator (SOI)substrate, a bulk Si substrate, or a silicon carbide (SiC) substrate. 7.The apparatus of claim 1, wherein the Ge/Si avalanche photodiodecomprises a waveguide structure.
 8. The apparatus of claim 1, whereinthe Ge/Si avalanche photodiode further comprises one or more electrodes,wherein the at least one heater comprises one or more electrodesdifferent than and separate from the one or more electrodes of the Ge/Siavalanche photodiode.
 9. The apparatus claim of 1, wherein the substratecomprises a Si layer and a buried oxide (BOX) layer adjacent and belowthe Si layer, and wherein the at least one heater is formed in thesubstrate to be adjacent and below the BOX layer of the substrate. 10.The apparatus claim of 1, wherein the substrate comprises a Si layer anda buried oxide (BOX) layer adjacent and below the Si layer, and whereinthe at least one heater is formed in the Si layer of the substrate. 11.The apparatus of claim 1, wherein the at least one heater comprisesmetal or TaN.
 12. The apparatus of claim 1, further comprising apackaging structure that contains the Ge/Si avalanche photodiodetherein, wherein the packaging structure is of a transistor outline (TO)type or a butterfly type.
 13. The apparatus of claim 12, wherein thepackaging structure is of the TO type, and wherein the packagingstructure comprises a 6-pin TO-header mounted with the at least oneheater integrated in Ge/Si avalanche photodiode.
 14. The apparatus ofclaim 13, wherein an electrode of a resistive component of the at leastone heater is connected to one pin of the 6-pin TO header, and whereinanother electrode of the resistive component is connected to a ground ora body of the 6-pin TO-header.
 15. The apparatus of claim 1, furthercomprising a temperature control loop configured to be triggered tomaintain a temperature of the avalanche photodiode in a range using theat least one heater in response to the environment temperature fallingbelow the threshold temperature.
 16. A method of fabrication of anapparatus, comprising: forming a Ge/Si avalanche photodiode on a primaryside of a silicon-on-insulator (SOI) substrate, the SOI substratecomprising a top Si layer, a Si substrate layer, and a buried oxide(BOX) layer disposed between the top Si layer and the Si substratelayer; performing a first etch process on the top Si layer of the SOIsubstrate; performing a second etch process on the BOX layer of the SOIsubstrate till the Si substrate layer to expose a portion of the Sisubstrate layer of the SOI substrate; forming at least one integratedheater in the SOI substrate; depositing a dielectric layer forinsulation; performing a dielectric etch process to fabricate one ormore contacts; performing a salicide process; performing a metaldeposition process; and performing a metal etch process.
 17. The methodclaim of 16, wherein forming the at least one integrated heater in theSOI substrate comprises performing an ion implantation process within aregion of the Si substrate layer where a portion of the BOX layer abovethe Si substrate layer is removed by the second etch process to form aresistive component of at least one integrated heater in a region dopedwith dopants of a first type.
 18. A method of fabrication of anapparatus, comprising: forming a Ge/Si avalanche photodiode on a top Silayer of a silicon-on-insulator (SOI) substrate, the SOI substratefurther comprising a buried oxide (BOX) layer below the top Si layer;performing an ion implantation process on a portion of the top Si layerto form a resistive component of at least one integrated heater in aregion doped with dopants of a first type; depositing a dielectric layerfor insulation; performing a dielectric etch process to fabricate one ormore contacts; performing a salicide process; performing a metaldeposition process; and performing a metal etch process.